This document is intended for use in the semiconductor IC manufacturing industry and provides reliability characterization techniques for low-k inter/intra level dielectrics (ILD) for the evaluation and control of ILD processes. It describes procedures developed for estimating the general integrity of back-end-of-line (BEOL) ILD. Two basic test procedures are described, the Voltage-Ramp Dielectric Breakdown (VRDB) test, and the Constant Voltage Time-Dependent Dielectric Breakdown stress (CVS). Each test is designed for different reliability and process evaluation purposes. This document also describes robust techniques to detect breakdown and TDDB data analysis.
- Published:
- 07/01/2015
- Number of Pages:
- 30
- File Size:
- 1 file , 510 KB
- Redline File Size:
- 2files, 4.6 MB
- Note:
- This product is unavailable in Russia, Ukraine, Belarus
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