This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of measurements so that valid comparisons can be made between different technologies, IC processes, and process variations in a simple, consistent and controlled way. The measurements specified should be viewed as a starting point in the characterization and benchmarking of the transistor manufacturing process.
- Published:
- 12/01/2001
- Number of Pages:
- 18
- File Size:
- 1 file , 60 KB
- Note:
- This product is unavailable in Russia, Ukraine, Belarus
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